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| BCR5PM-14L Triac Medium Power Use REJ03G0307-0100 Rev.1.00 Aug.20.2004 Features * * * * IT (RMS) : 5 A VDRM : 700 V IFGTI, IRGTI, IRGT : 30 mA Viso : 2000 V * Insulated Type * Planar Passivation Type * UL Recognized : Yellow Card No. E223904 File No. E80271 Outline TO-220F 2 3 1 1 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal Applications Switching mode power supply, washing machine, small motor control, copying machine, electric heater control, and other general controlling devices Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 14 700 840 Unit V V Rev.1.00, Aug.20.2004, page 1 of 7 BCR5PM-14L Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg -- Viso Ratings 5 50 10.4 3 0.3 10 2 - 40 to +125 - 40 to +125 2.0 2000 Unit A A A2s W W V A C C g V Conditions Commercial frequency, sine full wave 360 conduction, Tc = 95C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1*T2*G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-c) (dv/dt)c Min. -- -- -- -- -- -- -- -- 0.2 -- 5 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.8 1.5 1.5 1.5 30 30 30 -- 4.0 -- Unit mA V V V V mA mA mA V C/W V/s Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 7 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 125C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = - 2.5 A/ms 3. Peak off-state voltage VD = 400 V Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Main Current Main Voltage (dv/dt)c Rev.1.00, Aug.20.2004, page 2 of 7 BCR5PM-14L Performance Curves Maximum On-State Characteristics 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 0.5 1.0 1.5 100 Rated Surge On-State Current Surge On-State Current (A) 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 On-State Current (A) Tj = 125C Tj = 25C 2.0 2.5 3.0 3.5 4.0 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C) Gate Characteristics (I, II and III) 102 7 5 3 2 VGM = 10V 101 7 PG(AV) = 5 0.3W 3 VGT = 1.5V 2 100 7 5 3 2 Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 Typical Example Gate Voltage (V) IRGT I, IRGT III PGM = 3W IGM = 2A IFGT I IFGT I IRGT I IRGT III VGD = 0.2V 10-1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Gate Current (mA) Junction Temperature (C) Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C) Gate Trigger Voltage vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (C/W) 102 2 3 5 7 103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Typical Example Junction Temperature (C) Conduction Time (Cycles at 60Hz) Rev.1.00, Aug.20.2004, page 3 of 7 BCR5PM-14L Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Transient Thermal Impedance (C/W) 103 Maximum On-State Power Dissipation 10 On-State Power Dissipation (W) 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 No Fins 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 102 101 100 10-1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 360 Conduction Resistive, inductive loads 6 7 8 9 10 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Curves apply regardless 140 of conduction angle 160 160 Allowable Ambient Temperature vs. RMS On-State Current All fins are black painted 140 aluminum and greased 120 100 80 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 1 3 2 4 Ambient Temperature (C) Case Temperature (C) 120 100 80 60 40 120 x 120 x t2.3 100 x 100 x t2.3 60 x 60 x t2.3 360 Conduction 20 Resistive, inductive loads 0 0 1 3 2 4 5 6 7 8 5 6 7 8 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C) Allowable Ambient Temperature vs. RMS On-State Current 160 Repetitive Peak Off-State Current vs. Junction Temperature 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 Ambient Temperature (C) 140 120 100 80 60 40 20 0 0 0.5 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 1.0 1.5 2.0 2.5 3.0 RMS On-State Current (A) Junction Temperature (C) Rev.1.00, Aug.20.2004, page 4 of 7 BCR5PM-14L Holding Current vs. Junction Temperature Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C) 103 7 5 4 3 2 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 Latching Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 Typical Example T2+, G- Typical Example Distribution T2-, G- Typical Example Latching Current (mA) T2+, G+ Typical Example 100 -60 -40 -20 0 20 40 60 80 100 120 140 Junction Temperature (C) Junction Temperature (C) Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C) 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 140 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Typical Example 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 Typical Example Tj = 125C III Quadrant I Quadrant Junction Temperature (C) Rate of Rise of Off-State Voltage (V/s) Commutation Characteristics Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/s) 102 7 5 3 2 101 7 5 Minimum Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 3 2 102 7 5 3 2 101 0 10 23 5 7 101 23 5 7 102 Typical Example Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz IFGT I Typical Example IRGT I IRGT III 3 Characteristics Value 2 III Quadrant I Quadrant 100 100 23 5 7 101 23 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (s) Rev.1.00, Aug.20.2004, page 5 of 7 BCR5PM-14L Gate Trigger Characteristics Test Circuits 6 6 6V V A 330 6V V A 330 Test Procedure I 6 Test Procedure II 6V V A 330 Test Procedure III Rev.1.00, Aug.20.2004, page 6 of 7 BCR5PM-14L Package Dimensions TO-220F EIAJ Package Code Conforms JEDEC Code Mass (g) (reference value) 2.0 Lead Material Cu alloy 10.5 max 5.2 2.8 5.0 1.2 17 3.6 13.5 min 1.3 max 0.8 8.5 3.2 0.2 2.54 2.54 0.5 2.6 4.5 Symbol A A1 A2 b D E e x y y1 ZD ZE Dimension in Millimeters Min Typ Max Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example BCR5PM-14LA BCR5PM-14LA-A8 Straight type Vinyl sack 100 Type name +A Lead form Plastic Magazine (Tube) 50 Type name +A - Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 7 of 7 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. 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Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 http://www.renesas.com (c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .1.0 |
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